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| DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Sep 11 Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES * Low noise * Interchangeability of drain and source connections * High gain. APPLICATIONS * AM input stage in car radios * VHF amplifiers * Oscillators and mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. Top view handbook, halfpage 2 PMBFJ308; PMBFJ309; PMBFJ310 PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION source 1 g d s 3 MAM036 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Marking codes: PMBFJ308: M08. PMBFJ309: M09. PMBFJ310: M10. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage PMBFJ308 PMBFJ309 PMBFJ310 IDSS drain current PMBFJ308 PMBFJ309 PMBFJ310 Ptot yfs total power dissipation forward transfer admittance up to Tamb = 25 C VDS = 10 V; ID = 10 mA VGS = 0; VDS = 10 V 12 12 24 - 10 60 30 60 250 - mA mA mA mW mS VDS = 10 V; ID = 1 A -1 -1 -2 -6.5 -4 -6.5 V V V CONDITIONS - MIN. MAX. 25 V UNIT 1996 Sep 11 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 25 C open drain open source CONDITIONS PMBFJ308; PMBFJ309; PMBFJ310 MIN. - - - - - -65 - MAX. 25 -25 -25 50 250 150 150 V V V UNIT mA mW C C handbook, halfpage 400 MBB688 Ptot (mW) 300 200 100 0 0 50 100 150 200 Tamb (C) Fig.2 Power derating curve. 1996 Sep 11 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source cut-off voltage PMBFJ308 PMBFJ309 PMBFJ310 VGSS IDSS gate-source forward voltage drain current PMBFJ308 PMBFJ309 PMBFJ310 IGSS RDSon yfs yos gate leakage current drain-source on-state resistance forward transfer admittance common source output admittance VGS = -15 V; VDS = 0 VGS = 0; VDS = 100 mV ID = 10 mA; VDS = 10 V ID = 10 mA; VDS = 10 V IG = 1 mA; VDS = 0 VDS = 10 V; VGS = 0 12 12 24 - - 10 - CONDITIONS ID = 1 A; VDS = 10 V -1 -1 -2 - PARAMETER thermal resistance from junction to ambient; note 1 PMBFJ308; PMBFJ309; PMBFJ310 VALUE 500 UNIT K/W MIN. -25 - - - - - - - - - TYP. - MAX. V V -6.5 -4 -6.5 1 60 30 60 -1 - - 250 V V V V UNIT gate-source breakdown voltage IG = -1 A; VDS = 0 mA mA mA nA mS S 50 - - 1996 Sep 11 4 Philips Semiconductors Product specification N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL Cis Crs gis gfs grs gos Vn PARAMETER input capacitance reverse transfer capacitance common source input conductance common source transfer conductance common source reverse conductance common source output conductance equivalent input noise voltage CONDITIONS PMBFJ308; PMBFJ309; PMBFJ310 TYP. 3 6 1.3 200 3 13 12 -30 -450 150 400 6 MAX. 5 - 2.5 - - - - - - - - - UNIT pF pF pF S mS mS mS S S S S nV/Hz VDS = 10 V; VGS = -10 V; f = 1 MHz VDS = 10 V; VGS = 0; Tamb = 25 C VDS = 0; VGS = -10 V; f = 1 MHz VDS = 10 V; ID = 10 mA; f = 100 MHz VDS = 10 V; ID = 10 mA; f = 450 MHz VDS = 10 V; ID = 10 mA; f = 100 MHz VDS = 10 V; ID = 10 mA; f = 450 MHz VDS = 10 V; ID = 10 mA; f = 100 MHz VDS = 10 V; ID = 10 mA; f = 450 MHz VDS = 10 V; ID = 10 mA; f = 100 MHz VDS = 10 V; ID = 10 mA; f = 450 MHz VDS = 10 V; ID = 10 mA; f = 100 Hz handbook, halfpage 50 IDSS (mA) 40 MCD220 handbook, halfpage 20 MCD219 yfs (mS) 16 30 12 20 8 10 4 0 0 -1 -2 -3 -4 VGSoff (V) 0 0 -2 -4 -6 -8 VGSoff (V) VDS = 10 V; Tj = 25 C. VDS = 10 V; ID = 10 mA; Tj = 25 C. Fig.4 Fig.3 Drain current as a function of gate-source cut-off voltage; typical values. Forward transfer admittance as a function of gate-source cut-off voltage; typical values. 1996 Sep 11 5 Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 handbook, halfpage 150 MCD221 handbook, halfpage 80 MCD222 gos (S) RDSon () 60 100 40 50 20 0 0 -1 -2 -3 -4 VGSoff (V) 0 0 -1 -2 -3 -4 VGSoff (V) VDS = 10 V; ID = 10 mA; Tj = 25 C. VDS = 100 mV; VGS = 0; Tj = 25 C. Fig.5 Common-source output conductance as a function of gate-source cut-off voltage; typical values. Fig.6 Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. handbook, halfpage 16 MCD216 MCD213 handbook, halfpage 16 ID (mA) 12 VGS = 0 V ID (mA) 12 -0.25 V 8 -0.5 V 4 -0.75 V -1 V 0 0 4 8 12 VDS (V) 16 0 -2 -1.5 -1 -0.5 VGS (V) 0 4 8 Tj = 25 C. VDS = 10 V; Tj = 25 C. Fig.7 Typical output characteristics; PMBFJ308. Fig.8 Typical transfer characteristics; PMBFJ308. 1996 Sep 11 6 Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 handbook, halfpage 20 MCD218 ID (mA) handbook, halfpage 20 MCD215 VGS = 0 V ID (mA) 16 16 12 -0.25 V 12 -0.5 V 8 -0.75 V 4 -1 V 4 8 0 0 4 8 12 VDS (V) 16 0 -2 -1.5 -1 -0.5 VGS (V) 0 Tj = 25 C. VDS = 10 V; Tj = 25 C. Fig.9 Typical output characteristics; PMBFJ309. Fig.10 Typical transfer characteristics; PMBFJ309. handbook, halfpage 40 MCD217 ID (mA) 30 VGS = 0 V handbook, halfpage 40 MCD214 ID (mA) 30 -0.5 V 20 -1 V 20 -1.5 V 10 -2 V -2.5 V 0 0 4 8 12 VDS (V) 16 0 -4 -3 -2 -1 VGS (V) 0 10 Tj = 25 C. VDS = 10 V; Tj = 25 C. Fig.11 Typical output characteristics; PMBFJ310. Fig.12 Typical transfer characteristics; PMBFJ310. 1996 Sep 11 7 Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 handbook, halfpage 4 MCD224 handbook, halfpage Crs (pF) 3 10 Cis (pF) 8 MCD223 6 2 4 1 2 0 -10 -8 -6 -4 -2 0 VGS (V) 0 -10 -8 -6 -4 -2 0 VGS (V) VDS = 10 V; Tj = 25 C. VDS = 10 V; Tj = 25 C. Fig.13 Reverse transfer capacitance as a function of gate-source voltage; typical values. Fig.14 Input capacitance as a function of gate-source voltage; typical values. 103 handbook, full pagewidth ID (A) MCD229 102 10 1 10-1 10-2 10-3 -2.5 -2 -1.5 -1 -0.5 VGS (V) 0 VDS = 10 V; Tj = 25 C. Fig.15 Drain current as a function of gate-source voltage; typical values. 1996 Sep 11 8 Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 -104 handbook, full pagewidth IG (pA) -103 1 mA ID = 10 mA MCD230 -102 100 A -10 -1 IGSS -10-1 0 2 4 6 8 10 12 14 VDG (V) 16 Tj = 25 C. Fig.16 Gate current as a function of drain-gate voltage; typical values. 104 handbook, full pagewidth IGSS (pA) 103 MCD231 102 10 1 10-1 -25 0 25 50 75 100 125 150 Tj (oC) 175 Fig.17 Gate current as a function of junction temperature; typical values. 1996 Sep 11 9 Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 handbook, halfpage 100 MCD228 MCD227 handbook, halfpage 100 gis, bis (mS) bis gfs, -bfs (mS) 10 gfs 10 gis -bfs 1 0.1 10 100 f (MHz) 1000 1 10 100 f (MHz) 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 C. VDS = 10 V; ID = 10 mA; Tamb = 25 C. Fig.18 Input admittance; typical values. Fig.19 Forward transfer admittance; typical values. 102 handbook, halfpage -brs, -grs (mS) 10 MCD226 handbook, halfpage 100 MCD225 bos, gos (mS) 10 - brs 1 bos 1 10-1 - grs gos 10-2 10 0.1 10 100 f (MHz) 1000 100 f (MHz) 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 C. VDS = 10 V; ID = 10 mA; Tamb = 25 C. Fig.20 Reverse transfer admittance; typical values. Fig.21 Output admittance; typical values. 1996 Sep 11 10 Philips Semiconductors Product specification N-channel silicon field-effect transistors PACKAGE OUTLINE PMBFJ308; PMBFJ309; PMBFJ310 handbook, full pagewidth 3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A 0.55 0.45 10 o max 1.4 1.2 2.5 max MBC846 Dimensions in mm. Fig.22 SOT 23. 1996 Sep 11 11 Philips Semiconductors Product specification N-channel silicon field-effect transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PMBFJ308; PMBFJ309; PMBFJ310 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 11 12 |
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